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BC817U
NPN Silicon AF Transistor Array * For AF stages and driver applications * High current gain * Low collector-saturation voltage * Two (galvanic) internal isolated transistors with good matching in one package * Pb-free (RoHS compliant) package 1) * Qualified according AEC Q101
4 5 6 1 2 3
C1 6
B2 5
E2 4
TR2 TR1
1 E1
2 B1
3 C2
EHA07178
Type BC817U
Maximum Ratings Parameter
Marking Pin Configuration Package 6Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg
Value 45 50 5 500 1000 100 200 330 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipationTS 115 C Junction temperature Storage temperature
1Pb-containing
mA
mW C
package may be available upon special request
1
2007-04-20
BC817U
Thermal Resistance Parameter Junction - soldering point1) Symbol
RthJS
Value 105
Unit K/W
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 V(BR)CEO V(BR)CBO V(BR)EBO I CBO
Symbol min. 45 50 5
Values typ. max. -
Unit
V
Collector-base breakdown voltage
IC = 10 A, IE = 0
Emitter-base breakdown voltage
IE = 10 A, IC = 0
Collector-base cutoff current
VCB = 25 V, IE = 0 VCB = 25 V, IE = 0 , TA = 150 C
A 0.1 50 100 nA 160 100 250 400 0.7 1.2 V
Emitter-base cutoff current
VEB = 4 V, IC = 0
I EBO h FE
-
DC current gain2)
IC = 100 mA, V CE = 1 V IC = 300 mA, V CE = 1 V
Collector-emitter saturation voltage2)
IC = 500 mA, IB = 50 mA
VCEsat VBEsat
-
Base emitter saturation voltage2)
IC = 500 mA, IB = 50 mA
AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance f = 1 MHz, VBE = 10 V Emitter-base capacitance VEB = 0.5 V, f = 1 MHz
1For
fT Ccb Ceb
-
170 6 60
-
MHz pF
calculation of RthJA please refer to Application Note Thermal Resistance test: t < 300s; D < 2%
2Pulse
2
2007-04-20
BC817U
DC current gain hFE = (IC) VCE = 1 V
10 3
Collector-emitter saturation voltage IC = (VCEsat), hFE = 10
10 3
BC 817/818 EHP00223
C
mA 150 C 25 C -50 C
10 2
h FE
5
10 2
10 1
105 C 85 C 65 C 25 C -40 C
5
10 0 5
10 1 -5 10
10
-4
10
-3
10
-2
10
-1
0 A 10
10 -1
0
0.2
0.4
0.6
V
0.8
IC
VCEsat
Base-emitter saturation voltage IC = (V BEsat), hFE = 10
10 3
BC 817/818 EHP00222
Collector cutoff current ICBO = (TA) VCBO = 25 V
10 5
BC 817/818 EHP00221
C
mA 150 C 25 C -50 C
CBO
nA 10 4
10 5
2
10 3
10 1 5
max
10 2
typ
10 0 5
10 1
10 -1
0
1.0
2.0
3.0
V
4.0
10 0
0
50
100
C TA
150
V BEsat
3
2007-04-20
BC817U
Transition frequency fT = (IC) VCE = parameter in V, f = 2 GHz
10 3 fT MHz 5
60
BC 817/818 EHP00218
Collector-base capacitance Ccb = (V CB) Emitter-base capacitance Ceb = (VEB)
75 pF
C CB/C EB
55 50 45 40 35 30
10 2
5
CEB
25 20 15 10 5
CCB
10
1
10 0
10 1
10 2
mA
10 3
0 0
2
4
6
8
10
12
14
16
V
20
C
VCB/VEB
Total power dissipation Ptot = (TS)
Permissible Pulse Load RthJS = (t p)
400
mW
10 3
K/W
300
10 2
250
RthJS
10 1
Ptot
200
150 10 0
100
50 10 -1 -6 10
D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
0 0
20
40
60
80
100
120 C
150
10
-5
10
-4
10
-3
10
-2
s
10
0
TS
tp
4
2007-04-20
BC817U
Permissible Pulse Load Ptotmax/P totDC = (tp)
10 3
P totmax/P totDC
10 2
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 1
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
5
2007-04-20
Package SC74
BC817U
Package Outline
2.9 0.2 (2.25) B (0.35)
2.5 0.1
6 5 4
1.1 MAX. 0.15 +0.1 -0.06
0.25 0.1 1.6 0.1
10 MAX.
1
2
3
Pin 1 marking 1.9
0.35 +0.1 -0.05 0.95
10 MAX.
0.2
M
B 6x 0.2
M
A
0.1 MAX. A
Foot Print
0.5
0.95
Marking Layout (Example)
Small variations in positioning of Date code, Type code and Manufacture are possible.
1.9
2.9
Manufacturer
2005, June Date code (Year/Month)
Pin 1 marking Laser marking
BCW66H Type code
Standard Packing
Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel.
4
0.2
Pin 1 marking
3.15
2.7 8
1.15
6
2007-04-20
BC817U
Edition 2006-02-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2007. All Rights Reserved.
Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
7
2007-04-20

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